Single FETs, MOSFETs

Results: 4
Series
OptiMOS™OptiMOS™ 5OptiMOS™ 6
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
120 V150 V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 55A (Tc)11A (Ta), 63A (Tc)56A (Tc)87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V4.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 44A, 10V10.4mOhm @ 28A, 10V15.2mOhm @ 29A, 10V16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.2V @ 35µA2.3V @ 60µA4.6V @ 107µA4.6V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
23.1 nC @ 10 V26 nC @ 10 V29 nC @ 10 V40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 60 V1820 pF @ 75 V2000 pF @ 75 V3230 pF @ 75 V
Power Dissipation (Max)
2.5W (Ta), 96W (Tc)3W (Ta), 94W (Tc)96W (Tc)139W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TDSON-8PG-TDSON-8-7
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC093N15NS5ATMA1
MOSFET N-CH 150V 87A TDSON
Infineon Technologies
1,171
In Stock
1 : ¥27.34000
Cut Tape (CT)
5,000 : ¥12.77754
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
87A (Tc)
8V, 10V
9.3mOhm @ 44A, 10V
4.6V @ 107µA
40.7 nC @ 10 V
±20V
3230 pF @ 75 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
ISC104N12LM6ATMA1
ISC104N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
Infineon Technologies
8,181
In Stock
1 : ¥15.19000
Cut Tape (CT)
5,000 : ¥6.60699
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
120 V
11A (Ta), 63A (Tc)
3.3V, 10V
10.4mOhm @ 28A, 10V
2.2V @ 35µA
26 nC @ 10 V
±20V
1800 pF @ 60 V
-
3W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
2,788
In Stock
1 : ¥15.60000
Cut Tape (CT)
4,000 : ¥10.36693
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
56A (Tc)
8V, 10V
16mOhm @ 28A, 10V
4.6V @ 60µA
23.1 nC @ 10 V
±20V
1820 pF @ 75 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
3,728
In Stock
1 : ¥13.46000
Cut Tape (CT)
5,000 : ¥5.92332
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
8.9A (Ta), 55A (Tc)
4.5V, 10V
15.2mOhm @ 29A, 10V
2.3V @ 60µA
29 nC @ 10 V
±20V
2000 pF @ 75 V
-
2.5W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.