Single FETs, MOSFETs

Results: 2
Manufacturer
Microchip TechnologyVishay Siliconix
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
86mA (Tj)1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V10V
Rds On (Max) @ Id, Vgs
7Ohm @ 1.1A, 10V15Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V300 pF @ 25 V
Power Dissipation (Max)
740mW (Ta)50W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOICTO-251AA
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-251-3 Short Leads, IPAK, TO-251AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-251AA
IRFU9310PBF
MOSFET P-CH 400V 1.8A TO251AA
Vishay Siliconix
4,132
In Stock
1 : ¥8.78000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
400 V
1.8A (Tc)
10V
7Ohm @ 1.1A, 10V
4V @ 250µA
13 nC @ 10 V
±20V
270 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
8-SOIC
TP2640LG-G
MOSFET P-CH 400V 86MA 8SOIC
Microchip Technology
307
In Stock
1 : ¥20.44000
Cut Tape (CT)
3,300 : ¥15.51658
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
400 V
86mA (Tj)
2.5V, 10V
15Ohm @ 300mA, 10V
2V @ 1mA
-
±20V
300 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.