Single FETs, MOSFETs

Results: 2
Manufacturer
Texas InstrumentsToshiba Semiconductor and Storage
Series
NexFET™U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 18A, 10V28mOhm @ 3A, 4V
Vgs(th) (Max) @ Id
1V @ 1mA2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.6 nC @ 4 V20 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 10 V1500 pF @ 30 V
Power Dissipation (Max)
500mW (Ta)3.2W (Ta), 116W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-VSONP (5x6)UFM
Package / Case
3-SMD, Flat Leads8-PowerTDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
4,363
In Stock
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥1.00732
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.5V, 4V
28mOhm @ 3A, 4V
1V @ 1mA
13.6 nC @ 4 V
±10V
1010 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
UFM
3-SMD, Flat Leads
8-Power TDFN
CSD18563Q5AT
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
18,119
In Stock
1 : ¥8.87000
Cut Tape (CT)
250 : ¥5.73700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
6.8mOhm @ 18A, 10V
2.4V @ 250µA
20 nC @ 10 V
±20V
1500 pF @ 30 V
-
3.2W (Ta), 116W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.