Single FETs, MOSFETs

Results: 2
Manufacturer
Good-Ark SemiconductorMicrochip Technology
Drain to Source Voltage (Vdss)
350 V950 V
Current - Continuous Drain (Id) @ 25°C
500mA (Tj)5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 10V25Ohm @ 120mA, 0V
Vgs(th) (Max) @ Id
3.9V @ 250µA-
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V878 pF @ 50 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
15W (Tc)31W (Tc)
Supplier Device Package
TO-220-3TO-220F
Package / Case
TO-220-3TO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
DN2535N5-G
MOSFET N-CH 350V 500MA TO220-3
Microchip Technology
775
In Stock
1 : ¥13.87000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
350 V
500mA (Tj)
0V
25Ohm @ 120mA, 0V
-
-
±20V
300 pF @ 25 V
Depletion Mode
15W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
GSFU9504
GSFU9504
MOSFET, N-CH, SINGLE, 5A, 950V,
Good-Ark Semiconductor
970
In Stock
1 : ¥23.23000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
950 V
5A (Tc)
10V
1.2Ohm @ 2A, 10V
3.9V @ 250µA
14.9 nC @ 10 V
±30V
878 pF @ 50 V
-
31W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.