Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
-U-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V2.5V, 4V
Rds On (Max) @ Id, Vgs
500mOhm @ 500mA, 4.5V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA1.4V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 5 V48 pF @ 10 V
Power Dissipation (Max)
500mW (Ta)690mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
CST3CSOT-23-3 (TO-236)
Package / Case
SC-101, SOT-883TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4003NT1G
MOSFET N-CH 30V 500MA SOT23-3
onsemi
270,283
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.51309
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
26,744
In Stock
1 : ¥3.28000
Cut Tape (CT)
10,000 : ¥0.47205
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
700mA (Ta)
1.2V, 4.5V
500mOhm @ 500mA, 4.5V
1V @ 1mA
-
±10V
48 pF @ 10 V
-
500mW (Ta)
150°C
Surface Mount
CST3C
SC-101, SOT-883
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.