Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PMPB29XPE,115 MOSFET P-CH 20V 5A DFN2020MD-6 Nexperia USA Inc.	14,115 In Stock	1 : ¥3.28000 Cut Tape (CT) 3,000 : ¥0.94823 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	5A (Ta)	1.8V, 4.5V	32.5mOhm @ 5A, 4.5V	900mV @ 250µA	45 nC @ 4.5 V	±12V	2970 pF @ 10 V	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
BSZ060NE2LSATMA1 MOSFET N-CH 25V 12A/40A TSDSON Infineon Technologies	46,874 In Stock	1 : ¥4.43000 Cut Tape (CT) 5,000 : ¥2.06887 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	12A (Ta), 40A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	2V @ 250µA	9.1 nC @ 10 V	±20V	670 pF @ 12 V	-	2.1W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
SI9435BDY-T1-E3 MOSFET P-CH 30V 4.1A 8SO Vishay Siliconix	10,567 In Stock	1 : ¥7.06000 Cut Tape (CT) 2,500 : ¥2.91336 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.1A (Ta)	4.5V, 10V	42mOhm @ 5.7A, 10V	3V @ 250µA	24 nC @ 10 V	±20V	-	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.