Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SIS412DN-T1-GE3 MOSFET N-CH 30V 12A PPAK1212-8 Vishay Siliconix	54,202 In Stock	1 : ¥4.68000 Cut Tape (CT) 3,000 : ¥1.77239 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	24mOhm @ 7.8A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	435 pF @ 15 V	-	3.2W (Ta), 15.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
IXFN110N60P3 MOSFET N-CH 600V 90A SOT227B Littelfuse Inc.	639 In Stock	1 : ¥343.66000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	90A (Tc)	10V	56mOhm @ 55A, 10V	5V @ 8mA	245 nC @ 10 V	±30V	18000 pF @ 25 V	-	1500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
BUK9M15-40HX MOSFET N-CH 40V 30A LFPAK33 Nexperia USA Inc.	2,823 In Stock	1 : ¥6.16000 Cut Tape (CT) 1,500 : ¥2.62172 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	30A (Tc)	4.5V, 10V	15mOhm @ 10A, 10V	2.2V @ 1mA	16.2 nC @ 10 V	±16V	1026 pF @ 25 V	-	44W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.