Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)330A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V7V, 10V
Rds On (Max) @ Id, Vgs
0.87mOhm @ 25A, 10V160mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V149 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
162 pF @ 10 V10131 pF @ 15 V
Power Dissipation (Max)
500mW (Ta)268W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8SOT-23-3
Package / Case
SC-100, SOT-669TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
145,285
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
LFPAK56/POWER-SO8/SOT669
PSMNR82-30YLEX
PSMNR82-30YLE/SOT669/LFPAK
Nexperia USA Inc.
1,257
In Stock
1 : ¥22.99000
Cut Tape (CT)
1,500 : ¥8.42633
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
330A (Tc)
7V, 10V
0.87mOhm @ 25A, 10V
2.2V @ 2mA
149 nC @ 10 V
±20V
10131 pF @ 15 V
-
268W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.