Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002NXAKR MOSFET N-CH 60V 190MA TO236AB Nexperia USA Inc.	74,200 In Stock	1 : ¥1.23000 Cut Tape (CT) 3,000 : ¥0.20992 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	190mA (Ta), 300mA (Tc)	5V, 10V	4.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.43 nC @ 4.5 V	±20V	20 pF @ 10 V	-	265mW (Ta), 1.33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SUD50P10-43L-E3 MOSFET P-CH 100V 37.1A TO252 Vishay Siliconix	6,994 In Stock	1 : ¥20.93000 Cut Tape (CT) 2,000 : ¥9.45194 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	37.1A (Tc)	4.5V, 10V	43mOhm @ 9.2A, 10V	3V @ 250µA	160 nC @ 10 V	±20V	4600 pF @ 50 V	-	8.3W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFP4229PBF MOSFET N-CH 250V 44A TO247AC Infineon Technologies	1,198 In Stock	1 : ¥25.61000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	46mOhm @ 26A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	4560 pF @ 25 V	-	310W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IMZA65R027M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	301 In Stock	1 : ¥119.12000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	59A (Tc)	18V	34mOhm @ 38.3A, 18V	5.7V @ 11mA	63 nC @ 18 V	+23V, -5V	2131 pF @ 400 V	-	189W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.