Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS306NH6327XTSA1 MOSFET N-CH 30V 2.3A SOT23-3 Infineon Technologies	23,125 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.79808 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.3A (Ta)	4.5V, 10V	57mOhm @ 2.3A, 10V	2V @ 11µA	1.5 nC @ 5 V	±20V	275 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
SIA483DJ-T1-GE3 MOSFET P-CH 30V 12A PPAK SC70-6 Vishay Siliconix	76,363 In Stock	1 : ¥4.02000 Cut Tape (CT) 3,000 : ¥1.34537 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	12A (Tc)	4.5V, 10V	21mOhm @ 5A, 10V	2.2V @ 250µA	45 nC @ 10 V	±20V	1550 pF @ 15 V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
SQJ454EP-T1_GE3 MOSFET N-CH 200V 13A PPAK SO-8 Vishay Siliconix	11,062 In Stock	1 : ¥10.34000 Cut Tape (CT) 3,000 : ¥4.27271 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	13A (Tc)	4.5V, 10V	145mOhm @ 7.5A, 10V	2.5V @ 250µA	85 nC @ 10 V	±20V	2600 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.