Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVMYS021N06CLTWG MOSFET N-CH 60V 9.8A/27A 4LFPAK onsemi	2,990 In Stock 3,000 Factory	1 : ¥6.90000 Cut Tape (CT) 3,000 : ¥2.85666 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9.8A (Ta), 27A (Tc)	4.5V, 10V	21mOhm @ 10A, 10V	2V @ 16µA	5 nC @ 10 V	±20V	410 pF @ 25 V	-	3.8W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
SQ4435EY-T1_BE3 MOSFET P-CHANNEL 30V 15A 8SOIC Vishay Siliconix	2,494 In Stock	1 : ¥11.41000 Cut Tape (CT) 2,500 : ¥4.26691 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	15A (Tc)	4.5V, 10V	18mOhm @ 8A, 10V	2.5V @ 250µA	58 nC @ 10 V	±20V	2170 pF @ 15 V	-	6.8W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SCTWA50N120 SICFET N-CH 1200V 65A HIP247 STMicroelectronics	378 In Stock	1 : ¥172.15000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	20V	69mOhm @ 40A, 20V	3V @ 1mA	122 nC @ 20 V	+25V, -10V	1900 pF @ 400 V	-	318W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	HiP247™	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.