Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Series
-AlphaSGT™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)40A (Tc)
Rds On (Max) @ Id, Vgs
6.2mOhm @ 20A, 10V33mOhm @ 4.4A, 10V
Gate Charge (Qg) (Max) @ Vgs
23.2 nC @ 10 V45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1382 pF @ 20 V1650 pF @ 30 V
Power Dissipation (Max)
700mW (Ta)48W (Tc)
Supplier Device Package
8-DFN (5x6)U-DFN2020-6 (Type E)
Package / Case
6-PowerUDFN8-PowerSMD, Flat Leads
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
U-DFN2020-6 Type E
DMP4047LFDE-7
MOSFET P-CH 40V 3.3A 6UDFN
Diodes Incorporated
53,251
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43357
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
3.3A (Ta)
4.5V, 10V
33mOhm @ 4.4A, 10V
2.2V @ 250µA
23.2 nC @ 10 V
±20V
1382 pF @ 20 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
4,707
In Stock
1 : ¥8.87000
Cut Tape (CT)
3,000 : ¥3.67849
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
6.2mOhm @ 20A, 10V
2.2V @ 250µA
45 nC @ 10 V
±20V
1650 pF @ 30 V
-
48W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.