Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 25A, 10V19mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V31.3 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 6 V2256 pF @ 15 V
Power Dissipation (Max)
2.5W (Ta)106W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOICLFPAK56, Power-SO8
Package / Case
8-SOIC (0.154", 3.90mm Width)SC-100, SOT-669
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
LFPAK56/POWER-SO8/SOT669
PSMN2R4-30YLDX
MOSFET N-CH 30V 100A LFPAK56
Nexperia USA Inc.
2,773
In Stock
1 : ¥8.21000
Cut Tape (CT)
1,500 : ¥3.60387
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2.4mOhm @ 25A, 10V
2.2V @ 1mA
31.3 nC @ 10 V
±20V
2256 pF @ 15 V
-
106W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
0
In Stock
Check Lead Time
3,000 : ¥1.58991
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
12 V
9A (Ta)
1.5V, 4.5V
19mOhm @ 9A, 4.5V
900mV @ 250µA
18 nC @ 4.5 V
±8V
1370 pF @ 6 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.