Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedMicro Commercial Co
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Tj)5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
38mOhm @ 5.8A, 10V60mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA2.2V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
424 pF @ 5 V740 pF @ 4 V
Power Dissipation (Max)
700mW (Ta)1.4W
Supplier Device Package
SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23
SI2305B-TP
MOSFET P-CH 20V 4.2A SOT23
Micro Commercial Co
29,696
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.71245
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Tj)
1.8V, 4.5V
60mOhm @ 2.7A, 4.5V
900mV @ 250µA
15 nC @ 4.5 V
±8V
740 pF @ 4 V
-
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3051L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
14,521
In Stock
84,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.99221
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
4.5V, 10V
38mOhm @ 5.8A, 10V
2.2V @ 250µA
-
±20V
424 pF @ 5 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.