Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPT012N08N5ATMA1 MOSFET N-CH 80V 300A 8HSOF Infineon Technologies	7,715 In Stock	1 : ¥51.72000 Cut Tape (CT) 2,000 : ¥27.49345 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	300A (Tc)	6V, 10V	1.2mOhm @ 150A, 10V	3.8V @ 280µA	223 nC @ 10 V	±20V	17000 pF @ 40 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
2N7002NXBKR MOSFET N-CH 60V 270MA TO236AB Nexperia USA Inc.	34,535 In Stock	1 : ¥1.56000 Cut Tape (CT) 3,000 : ¥0.26391 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	270mA (Ta), 330mA (Tc)	5V, 10V	2.8Ohm @ 200mA, 10V	2.1V @ 250µA	1 nC @ 10 V	±20V	23.6 pF @ 10 V	-	310mW (Ta), 1.67W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SQD40N10-25_GE3 MOSFET N-CH 100V 40A TO252 Vishay Siliconix	3,413 In Stock	1 : ¥50.24000 Cut Tape (CT) 2,000 : ¥23.47920 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	25mOhm @ 40A, 10V	2.5V @ 250µA	70 nC @ 10 V	±20V	3380 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.