Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-CoolMOS™ G7TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
25 V40 V60 V600 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)220mA (Ta)4.4A (Tc)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
28mOhm @ 28.8A, 10V77mOhm @ 3.1A, 10V4Ohm @ 400mA, 4.5V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.06V @ 250µA2.5V @ 250µA4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V21 nC @ 10 V123 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V50 pF @ 25 V595 pF @ 20 V4820 pF @ 400 V
Power Dissipation (Max)
225mW (Ta)350mW (Ta)1.25W (Ta), 2.5W (Tc)391W (Tc)
Supplier Device Package
PG-HSOF-8-2SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerSFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002LT1G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
691,214
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
286,402
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2319CDS-T1-GE3
MOSFET P-CH 40V 4.4A SOT23-3
Vishay Siliconix
41,711
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.52883
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
4.4A (Tc)
4.5V, 10V
77mOhm @ 3.1A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
595 pF @ 20 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PG-HSOF-8-2
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
Infineon Technologies
4,433
In Stock
1 : ¥112.88000
Cut Tape (CT)
2,000 : ¥66.51379
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
28mOhm @ 28.8A, 10V
4V @ 1.44mA
123 nC @ 10 V
±20V
4820 pF @ 400 V
-
391W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.