Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLML2502TRPBF MOSFET N-CH 20V 4.2A SOT23 Infineon Technologies	83,443 In Stock	1 : ¥5.25000 Cut Tape (CT) 3,000 : ¥1.20579 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	45mOhm @ 4.2A, 4.5V	1.2V @ 250µA	12 nC @ 5 V	±12V	740 pF @ 15 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
C3M0120100J SICFET N-CH 1000V 22A D2PAK-7 Wolfspeed, Inc.	215 In Stock	1 : ¥137.02000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1000 V	22A (Tc)	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	21.5 nC @ 15 V	+15V, -4V	350 pF @ 600 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.