Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
16.5A (Ta), 58A (Tc)30A (Ta), 158A (Tc)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V11mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1725 pF @ 50 V5117 pF @ 50 V
Power Dissipation (Max)
6.2W (Ta), 73W (Tc)7.3W (Ta), 208W (Tc)
Supplier Device Package
8-DFN (5x6)TO-252 (DPAK)
Package / Case
8-PowerSMD, Flat LeadsTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252, (D-Pak)
AOD66923
MOSFET N-CH 100V 16.5A/58A TO252
Alpha & Omega Semiconductor Inc.
10,745
In Stock
1 : ¥6.24000
Cut Tape (CT)
2,500 : ¥3.31472
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
16.5A (Ta), 58A (Tc)
4.5V, 10V
11mOhm @ 20A, 10V
2.6V @ 250µA
35 nC @ 10 V
±20V
1725 pF @ 50 V
-
6.2W (Ta), 73W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
3,000
In Stock
3,000 : ¥5.64181
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
30A (Ta), 158A (Tc)
4.5V, 10V
4.2mOhm @ 20A, 10V
2.6V @ 250µA
97 nC @ 10 V
±20V
5117 pF @ 50 V
-
7.3W (Ta), 208W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.