Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVMFS5113PLT1G MOSFET P-CH 60V 10A/64A 5DFN onsemi	3,180 In Stock	1 : ¥22.41000 Cut Tape (CT) 1,500 : ¥10.64823 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	10A (Ta), 64A (Tc)	4.5V, 10V	14mOhm @ 17A, 10V	2.5V @ 250µA	83 nC @ 10 V	±20V	4400 pF @ 25 V	-	3.8W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IQDH45N04LM6CGATMA1 OPTIMOS 6 POWER-TRANSISTOR Infineon Technologies	4,446 In Stock	1 : ¥30.46000 Cut Tape (CT) 5,000 : ¥14.71315 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	60A (Ta), 637A (Tc)	4.5V, 10V	0.45mOhm @ 50A, 10V	2.3V @ 1.449mA	129 nC @ 10 V	±20V	12000 pF @ 20 V	-	3W (Ta), 333W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
STV270N4F3 MOSFET N-CH 40V 270A 10POWERSO STMicroelectronics	1,120 In Stock	1 : ¥45.32000 Cut Tape (CT) 600 : ¥27.36230 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	40 V	270A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	7500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.