Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
40 V60 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)3.6A (Ta)
Rds On (Max) @ Id, Vgs
56mOhm @ 3.6A, 10V5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 25µA3V @ 250µA
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V266 pF @ 25 V
Power Dissipation (Max)
300mW (Ta)1.3W (Ta)
Supplier Device Package
Micro3™/SOT-23SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML0040TRPBF
MOSFET N-CH 40V 3.6A SOT23
Infineon Technologies
42,149
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.06410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3.6A (Ta)
4.5V, 10V
56mOhm @ 3.6A, 10V
2.5V @ 25µA
3.9 nC @ 4.5 V
±16V
266 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MMBF170Q-7-F
MOSFET N-CH 60V 500MA SOT23-3
Diodes Incorporated
13,843
In Stock
714,000
Factory
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.50753
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
4.5V, 10V
5Ohm @ 200mA, 10V
3V @ 250µA
-
±20V
40 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.