Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesLittelfuse Inc.onsemiSTMicroelectronicsVishay Siliconix
Series
HiPerFET™, Ultra X3OptiMOS™STripFET™ThunderFET®UniFET™
Drain to Source Voltage (Vdss)
250 V300 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)45A (Tc)51A (Tc)56A (Tc)61A (Tc)63A (Tc)64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V10V
Rds On (Max) @ Id, Vgs
20mOhm @ 64A, 10V22mOhm @ 61A, 10V27mOhm @ 28A, 10V60mOhm @ 25.5A, 10V60mOhm @ 25A, 10V69mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4V @ 270µA4V @ 90µA4.5V @ 1.5mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V56 nC @ 10 V68.2 nC @ 10 V70 nC @ 10 V86 nC @ 10 V88 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 100 V2670 pF @ 25 V3410 pF @ 25 V3750 pF @ 25 V7076 pF @ 125 V7100 pF @ 100 V
Power Dissipation (Max)
136W (Tc)160W (Tc)300W (Tc)320W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO220-3PG-TO220-3-1TO-220TO-220-3TO-220AB
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FDP51N25
MOSFET N-CH 250V 51A TO220-3
onsemi
995
In Stock
1,000
Factory
1 : ¥22.82000
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N-Channel
MOSFET (Metal Oxide)
250 V
51A (Tc)
10V
60mOhm @ 25.5A, 10V
5V @ 250µA
70 nC @ 10 V
±30V
3410 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
IPP600N25N3GXKSA1
MOSFET N-CH 250V 25A TO220-3
Infineon Technologies
7,393
In Stock
1 : ¥23.73000
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N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
IPP200N25N3GXKSA1
MOSFET N-CH 250V 64A TO220-3
Infineon Technologies
5,898
In Stock
1 : ¥51.48000
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N-Channel
MOSFET (Metal Oxide)
250 V
64A (Tc)
10V
20mOhm @ 64A, 10V
4V @ 270µA
86 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
STP50NF25
MOSFET N-CH 250V 45A TO220AB
STMicroelectronics
1,329
In Stock
1 : ¥22.08000
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N-Channel
MOSFET (Metal Oxide)
250 V
45A (Tc)
10V
69mOhm @ 22A, 10V
4V @ 250µA
68.2 nC @ 10 V
±20V
2670 pF @ 25 V
-
160W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220AB
SUP10250E-GE3
MOSFET N-CH 250V 63A TO220AB
Vishay Siliconix
248
In Stock
1 : ¥22.82000
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N-Channel
MOSFET (Metal Oxide)
250 V
63A (Tc)
7.5V, 10V
-
4V @ 250µA
88 nC @ 10 V
±20V
-
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP220N25NFDAKSA1
MOSFET N-CH 250V 61A TO220-3
Infineon Technologies
903
In Stock
1 : ¥49.34000
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N-Channel
MOSFET (Metal Oxide)
250 V
61A (Tc)
10V
22mOhm @ 61A, 10V
4V @ 270µA
86 nC @ 10 V
±20V
7076 pF @ 125 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IXFP56N30X3
MOSFET N-CH 300V 56A TO220AB
Littelfuse Inc.
504
In Stock
1,050
Factory
1 : ¥68.47000
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N-Channel
MOSFET (Metal Oxide)
300 V
56A (Tc)
10V
27mOhm @ 28A, 10V
4.5V @ 1.5mA
56 nC @ 10 V
±20V
3750 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.