Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
154mA (Tj)2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
144mOhm @ 1.9A, 10V7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 100µA3V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 5 V105 pF @ 30 V
Power Dissipation (Max)
300mW (Tj)1.6W (Tc)
Supplier Device Package
SC-75, SOT-416SOT-23-3 (TO-236)
Package / Case
SC-75, SOT-416TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SC−75-3_463
NTA7002NT1G
MOSFET N-CH 30V 154MA SC75
onsemi
192,466
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.46912
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
154mA (Tj)
2.5V, 4.5V
7Ohm @ 154mA, 4.5V
1.5V @ 100µA
-
±10V
20 pF @ 5 V
-
300mW (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
SOT-23-3
SI2308CDS-T1-GE3
MOSFET N-CH 60V 2.6A SOT23-3
Vishay Siliconix
18,467
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.82399
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.6A (Tc)
4.5V, 10V
144mOhm @ 1.9A, 10V
3V @ 250µA
4 nC @ 10 V
±20V
105 pF @ 30 V
-
1.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.