Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V100 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)14A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 20A, 10V44mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 8 V30 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
118 pF @ 10 V2085 pF @ 50 V
Power Dissipation (Max)
830mW1.3W (Ta)
Supplier Device Package
PowerDI5060-8SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP2070UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
Diodes Incorporated
3,066
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.84681
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Tc)
1.8V, 4.5V
44mOhm @ 2A, 4.5V
950mV @ 250µA
8.2 nC @ 8 V
±8V
118 pF @ 10 V
-
830mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMPH4015SPSQ-13
DMT10H009SPS-13
MOSFET N-CH 100V PWRDI5060
Diodes Incorporated
4,349
In Stock
177,500
Factory
1 : ¥7.31000
Cut Tape (CT)
2,500 : ¥3.01901
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14A (Ta), 80A (Tc)
10V
8.5mOhm @ 20A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
2085 pF @ 50 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerDI5060-8
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.