Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes Incorporated
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
30 V100 V
Current - Continuous Drain (Id) @ 25°C
170mA (Ta)26A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
3mOhm @ 20A, 10V6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V1835 pF @ 15 V
Power Dissipation (Max)
300mW (Ta)3.1W (Ta), 62.5W (Tc)
Supplier Device Package
8-DFN-EP (3x3)SOT-23-3
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS123-7-F
MOSFET N-CH 100V 170MA SOT23-3
Diodes Incorporated
156,531
In Stock
13,017,000
Factory
1 : ¥2.13000
Cut Tape (CT)
3,000 : ¥0.35562
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
170mA (Ta)
10V
6Ohm @ 170mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-DFN
AON7508
MOSFET N-CH 30V 26A/32A 8DFN
Alpha & Omega Semiconductor Inc.
40,350
In Stock
1 : ¥4.43000
Cut Tape (CT)
5,000 : ¥2.08324
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
30 V
26A (Ta), 32A (Tc)
4.5V, 10V
3mOhm @ 20A, 10V
2.2V @ 250µA
40 nC @ 10 V
±20V
1835 pF @ 15 V
-
3.1W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.