Single FETs, MOSFETs

Results: 2
Manufacturer
Texas InstrumentsVishay Siliconix
Series
FemtoFET™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
8 V20 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 8V
Rds On (Max) @ Id, Vgs
54mOhm @ 1A, 4.5V94mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id
700mV @ 250µA1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.42 nC @ 4.5 V6.5 nC @ 4.5 V
Vgs (Max)
-12V±5V
Supplier Device Package
3-PICOSTAR4-Microfoot
Package / Case
3-XFDFN4-XFBGA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CSDxxxxF4T
CSD25484F4
MOSFET P-CH 20V 2.5A 3PICOSTAR
Texas Instruments
26,981
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.80472
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.8V, 8V
94mOhm @ 500mA, 8V
1.2V @ 250µA
1.42 nC @ 4.5 V
-12V
230 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
4-XFBGA
SI8802DB-T2-E1
MOSFET N-CH 8V 4MICROFOOT
Vishay Siliconix
28,740
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.14192
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
8 V
3A (Ta)
1.2V, 4.5V
54mOhm @ 1A, 4.5V
700mV @ 250µA
6.5 nC @ 4.5 V
±5V
-
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.