Single FETs, MOSFETs

Results: 3
Manufacturer
EPCNexperia USA Inc.Rohm Semiconductor
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)18A (Tj)48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 5V71mOhm @ 5A, 10V2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA2.5V @ 5mA4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13.8 nC @ 5 V16.4 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 25 V773 pF @ 50 V2103 pF @ 75 V
Power Dissipation (Max)
200mW (Ta)65W (Tc)-
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
7-QFN (3x5)LFPAK33SST3
Package / Case
7-PowerWQFNSOT-1210, 8-LFPAK33 (5-Lead)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
LFPAK33
PSMN075-100MSEX
MOSFET N-CH 100V 18A LFPAK33
Nexperia USA Inc.
41,372
In Stock
1 : ¥6.24000
Cut Tape (CT)
1,500 : ¥2.64963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18A (Tj)
10V
71mOhm @ 5A, 10V
4V @ 1mA
16.4 nC @ 10 V
±20V
773 pF @ 50 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
EPC2308ENGRT
EPC2308ENGRT
TRANS GAN 150V .006OHM 3X5PQFN
EPC
50,517
In Stock
1 : ¥51.80000
Cut Tape (CT)
3,000 : ¥27.51521
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
48A (Tc)
5V
6mOhm @ 15A, 5V
2.5V @ 5mA
13.8 nC @ 5 V
+6V, -4V
2103 pF @ 75 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
7-QFN (3x5)
7-PowerWQFN
SST3
RK7002BMT116
MOSFET N-CH 60V 250MA SST3
Rohm Semiconductor
272,440
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.27486
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
250mA (Ta)
2.5V, 10V
2.4Ohm @ 250mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 25 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.