Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)5.9A (Tc)62A (Tc)
Rds On (Max) @ Id, Vgs
8.7mOhm @ 31A, 10V45mOhm @ 4.2A, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA2.5V @ 250µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V590 pF @ 15 V1077 pF @ 15 V
Power Dissipation (Max)
400mW (Ta)1.25W (Ta), 2.5W (Tc)65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3 (TO-236)TO-220ABTO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2343CDS-T1-GE3
MOSFET P-CH 30V 5.9A SOT23-3
Vishay Siliconix
17,837
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.9A (Tc)
4.5V, 10V
45mOhm @ 4.2A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
590 pF @ 15 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-92-3 Formed Leads
2N7000-D74Z
MOSFET N-CH 60V 200MA TO92-3
onsemi
19,919
In Stock
118,000
Factory
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.79533
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
14,756
In Stock
1 : ¥8.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
30 V
62A (Tc)
4.5V, 10V
8.7mOhm @ 31A, 10V
2.35V @ 25µA
13 nC @ 4.5 V
±20V
1077 pF @ 15 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.