Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
600mOhm @ 200mA, 4.5V1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2.3V @ 250µA
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V52 pF @ 16 V
Power Dissipation (Max)
300mW (Ta)400mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)X1-DFN1212-3
Package / Case
3-UDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002KT7G
MOSFET N-CH 60V 320MA SOT23-3
onsemi
37,380
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,500 : ¥0.29870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
3-XDFN
DMN2450UFD-7
MOSFET N-CH 20V 900MA 3DFN
Diodes Incorporated
9,889
In Stock
1,473,000
Factory
1 : ¥2.63000
Cut Tape (CT)
3,000 : ¥0.47483
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
900mA (Ta)
1.5V, 4.5V
600mOhm @ 200mA, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
±12V
52 pF @ 16 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1212-3
3-UDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.