Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI4401FDY-T1-GE3 MOSFET P-CH 40V 9.9A/14A 8SO Vishay Siliconix	45,330 In Stock	1 : ¥6.90000 Cut Tape (CT) 2,500 : ¥2.63259 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	9.9A (Ta), 14A (Tc)	4.5V, 10V	14.2mOhm @ 10A, 10V	2.3V @ 250µA	100 nC @ 10 V	±20V	4000 pF @ 20 V	-	2.5W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD13N65M2 MOSFET N-CH 650V 10A DPAK STMicroelectronics	1,765 In Stock	1 : ¥13.96000 Cut Tape (CT) 2,500 : ¥4.93922 Tape & Reel (TR)	MDmesh™ M2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	430mOhm @ 5A, 10V	4V @ 250µA	17 nC @ 10 V	±25V	590 pF @ 100 V	-	110W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
CSD17578Q5AT MOSFET N-CH 30V 25A 8VSON Texas Instruments	1,438 In Stock	1 : ¥7.96000 Cut Tape (CT) 250 : ¥5.04376 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	25A (Ta)	4.5V, 10V	6.9mOhm @ 10A, 10V	1.9V @ 250µA	22.3 nC @ 10 V	±20V	1510 pF @ 15 V	-	3.1W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (5x6)	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.