Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)12.5A (Ta)
Rds On (Max) @ Id, Vgs
6.2mOhm @ 19.5A, 4.5V57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V27 nC @ 4.5 V
Vgs (Max)
±8V±12V
Power Dissipation (Max)
710mW (Ta)1.5W (Ta)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3 (TO-236)
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2302CDS-T1-GE3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
47,018
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.34532
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7106DN-T1-E3
MOSFET N-CH 20V 12.5A PPAK1212-8
Vishay Siliconix
51,275
In Stock
1 : ¥12.31000
Cut Tape (CT)
3,000 : ¥5.10897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
12.5A (Ta)
2.5V, 4.5V
6.2mOhm @ 19.5A, 4.5V
1.5V @ 250µA
27 nC @ 4.5 V
±12V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.