Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon Technologiesonsemi
Series
-HEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
780mA (Ta)17A (Ta), 71A (Tc)30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 35A, 10V14mOhm @ 30A, 10V600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.45 V20 nC @ 10 V92 nC @ 10 V
Vgs (Max)
±12V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
97 pF @ 15 V1400 pF @ 25 V1870 pF @ 25 V
Power Dissipation (Max)
540mW (Ta)3.6W (Ta), 61W (Tc)120W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)Micro3™/SOT-23TO-252AA (DPAK)
Package / Case
8-PowerTDFN, 5 LeadsTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
Infineon Technologies
195,095
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.94213
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
780mA (Ta)
2.7V, 4.5V
600mOhm @ 610mA, 4.5V
1.5V @ 250µA
3.6 nC @ 4.45 V
±12V
97 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO252-3
IRLR3915TRPBF
MOSFET N-CH 55V 30A DPAK
Infineon Technologies
6,612
In Stock
1 : ¥11.90000
Cut Tape (CT)
2,000 : ¥4.47845
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
30A (Tc)
5V, 10V
14mOhm @ 30A, 10V
3V @ 250µA
92 nC @ 10 V
±16V
1870 pF @ 25 V
-
120W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
5-DFN, 8-SO Flat Lead
NTMFS5C670NLT3G
MOSFET N-CH 60V 17A/71A 5DFN
onsemi
818
In Stock
15,000
Factory
1 : ¥7.22000
Cut Tape (CT)
5,000 : ¥2.84578
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 71A (Tc)
4.5V, 10V
6.1mOhm @ 35A, 10V
2V @ 250µA
20 nC @ 10 V
±20V
1400 pF @ 25 V
-
3.6W (Ta), 61W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.