Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesSTMicroelectronics
Series
MDmesh™ K5OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
250 V800 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)64A (Tc)
Rds On (Max) @ Id, Vgs
20mOhm @ 64A, 10V445mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V86 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 100 V7100 pF @ 100 V
Power Dissipation (Max)
130W (Tc)300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-TO263-3TO-263 (D2PAK)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB200N25N3GATMA1
MOSFET N-CH 250V 64A D2PAK
Infineon Technologies
2,172
In Stock
1 : ¥59.85000
Cut Tape (CT)
1,000 : ¥33.94828
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
64A (Tc)
10V
20mOhm @ 64A, 10V
4V @ 270µA
86 nC @ 10 V
±20V
7100 pF @ 100 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2Pak
STB14N80K5
MOSFET N-CH 800V 12A D2PAK
STMicroelectronics
1,350
In Stock
1 : ¥26.60000
Cut Tape (CT)
1,000 : ¥13.73410
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
12A (Tc)
10V
445mOhm @ 6A, 10V
5V @ 100µA
22 nC @ 10 V
±30V
620 pF @ 100 V
-
130W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.