Single FETs, MOSFETs

Results: 2
Series
ThunderFET®TrenchFET®
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
9.3mOhm @ 30A, 10V17mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4132 pF @ 100 V9200 pF @ 25 V
Power Dissipation (Max)
2.4W (Ta), 250W (Tc)375W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
SUP90P06-09L-E3
MOSFET P-CH 60V 90A TO220AB
Vishay Siliconix
1,476
In Stock
1 : ¥43.92000
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P-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
4.5V, 10V
9.3mOhm @ 30A, 10V
3V @ 250µA
240 nC @ 10 V
±20V
9200 pF @ 25 V
-
2.4W (Ta), 250W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
SUP90140E-GE3
MOSFET N-CH 200V 90A TO220AB
Vishay Siliconix
455
In Stock
1 : ¥26.35000
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N-Channel
MOSFET (Metal Oxide)
200 V
90A (Tc)
7.5V, 10V
17mOhm @ 30A, 10V
4V @ 250µA
96 nC @ 10 V
±20V
4132 pF @ 100 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.