Single FETs, MOSFETs

Results: 3
Current - Continuous Drain (Id) @ 25°C
600mA (Tc)1A (Tc)1.4A (Tc)
Rds On (Max) @ Id, Vgs
13Ohm @ 500mA, 10V20Ohm @ 500mA, 10V32Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
13.3 nC @ 10 V17.6 nC @ 10 V24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 25 V550 pF @ 25 V666 pF @ 25 V
Power Dissipation (Max)
42W (Tc)63W (Tc)86W (Tc)
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IXTP1R4N120P
MOSFET N-CH 1200V 1.4A TO220AB
Littelfuse Inc.
151
In Stock
450
Factory
1 : ¥44.50000
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N-Channel
MOSFET (Metal Oxide)
1200 V
1.4A (Tc)
10V
13Ohm @ 500mA, 10V
4.5V @ 100µA
24.8 nC @ 10 V
±20V
666 pF @ 25 V
-
86W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
IXTP06N120P
MOSFET N-CH 1200V 600MA TO220AB
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥39.24000
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N-Channel
MOSFET (Metal Oxide)
1200 V
600mA (Tc)
10V
32Ohm @ 500mA, 10V
4.5V @ 50µA
13.3 nC @ 10 V
±20V
270 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
IXTP1N120P
MOSFET N-CH 1200V 1A TO220AB
Littelfuse Inc.
0
In Stock
1,250
Factory
Check Lead Time
300 : ¥25.18577
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N-Channel
MOSFET (Metal Oxide)
1200 V
1A (Tc)
10V
20Ohm @ 500mA, 10V
4.5V @ 50µA
17.6 nC @ 10 V
±20V
550 pF @ 25 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.