Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.Rohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V100 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
0.9V, 4.5V10V
Rds On (Max) @ Id, Vgs
71mOhm @ 5A, 10V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
800mV @ 1mA4V @ 1mA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
26 pF @ 10 V773 pF @ 50 V
Power Dissipation (Max)
150mW (Ta)65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
LFPAK33VMT3
Package / Case
SOT-1210, 8-LFPAK33 (5-Lead)SOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RYM002N05T2CL
MOSFET N-CH 50V 200MA VMT3
Rohm Semiconductor
898,353
In Stock
1 : ¥3.04000
Cut Tape (CT)
8,000 : ¥0.65299
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
0.9V, 4.5V
2.2Ohm @ 200mA, 4.5V
800mV @ 1mA
-
±8V
26 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
LFPAK33
PSMN075-100MSEX
MOSFET N-CH 100V 18A LFPAK33
Nexperia USA Inc.
41,372
In Stock
1 : ¥6.24000
Cut Tape (CT)
1,500 : ¥2.64963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
18A (Tj)
10V
71mOhm @ 5A, 10V
4V @ 1mA
16.4 nC @ 10 V
±20V
773 pF @ 50 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.