Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiTexas InstrumentsVishay Siliconix
Series
-NexFET™OptiMOS™PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
80 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)33.6A (Tc)200A (Ta)300A (Tc)
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V2.4mOhm @ 100A, 10V30mOhm @ 8A, 10V144mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.2V @ 250µA3.8V @ 275µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V68 nC @ 10 V153 nC @ 10 V231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 75 V3800 pF @ 25 V12000 pF @ 50 V16250 pF @ 40 V
Power Dissipation (Max)
1.6W (Ta)68W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PG-HSOG-8-1PowerPAK® SO-8SuperSOT™-6TO-263 (DDPAK-3)
Package / Case
8-PowerSMD, Gull WingPowerPAK® SO-8SOT-23-6 Thin, TSOT-23-6TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
DDPAK/TO-263-3
CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
Texas Instruments
1,072
In Stock
1 : ¥36.45000
Cut Tape (CT)
500 : ¥22.01000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
200A (Ta)
6V, 10V
2.4mOhm @ 100A, 10V
3.2V @ 250µA
153 nC @ 10 V
±20V
12000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (DDPAK-3)
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
5,134
In Stock
1 : ¥50.41000
Cut Tape (CT)
1,800 : ¥26.05847
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOG-8-1
8-PowerSMD, Gull Wing
SG6858TZ
FDC86244
MOSFET N-CH 150V 2.3A SUPERSOT6
onsemi
7,186
In Stock
153,000
Factory
1 : ¥6.90000
Cut Tape (CT)
3,000 : ¥2.86131
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
2.3A (Ta)
6V, 10V
144mOhm @ 2.3A, 10V
4V @ 250µA
6 nC @ 10 V
±20V
345 pF @ 75 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
PowerPak® SO-8
SQJ211ELP-T1_GE3
MOSFET P-CH 100V 33.6A PPAK SO-8
Vishay Siliconix
5,905
In Stock
1 : ¥12.56000
Cut Tape (CT)
3,000 : ¥5.20422
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
33.6A (Tc)
-
30mOhm @ 8A, 10V
2.5V @ 250µA
68 nC @ 10 V
±20V
3800 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.