Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
-OptiMOS™ 6U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta), 31A (Tc)55A (Tc)90A (Tc)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
1.28mOhm @ 50A, 10V3.7mOhm @ 45A, 10V7.7mOhm @ 27.5A, 10V23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA2.5V @ 500µA3.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 10 V44 nC @ 10 V67 nC @ 10 V91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 50 V2800 pF @ 50 V6300 pF @ 50 V8100 pF @ 30 V
Power Dissipation (Max)
960mW (Ta), 170W (Tc)3W (Ta), 48W (Tc)93W (Tc)210W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C
Supplier Device Package
8-SOP Advance (5x5.75)8-SOP Advance (5x5)DPAKPG-TSDSON-8 FL
Package / Case
8-PowerTDFN8-PowerVDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
13,340
In Stock
1 : ¥9.61000
Cut Tape (CT)
5,000 : ¥3.77390
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Ta), 31A (Tc)
8V, 10V
23mOhm @ 10A, 10V
3.3V @ 13µA
9.3 nC @ 10 V
±20V
690 pF @ 50 V
-
3W (Ta), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8 FL
8-PowerTDFN
18,471
In Stock
1 : ¥25.70000
Cut Tape (CT)
5,000 : ¥8.24059
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
1.28mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
-
960mW (Ta), 170W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
DPAK+
TK7R7P10PL,RQ
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
10,449
In Stock
1 : ¥12.81000
Cut Tape (CT)
2,500 : ¥3.48017
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
55A (Tc)
4.5V, 10V
7.7mOhm @ 27.5A, 10V
2.5V @ 500µA
44 nC @ 10 V
±20V
2800 pF @ 50 V
-
93W (Tc)
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
150V U-MOS IX-H SOP-ADVANCE(N) 3
TPH3R70APL1,LQ
150V U-MOS IX-H SOP-ADVANCE(N) 3
Toshiba Semiconductor and Storage
9,105
In Stock
1 : ¥17.90000
Cut Tape (CT)
5,000 : ¥5.02851
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
90A (Tc)
4.5V, 10V
3.7mOhm @ 45A, 10V
2.5V @ 1mA
67 nC @ 10 V
±20V
6300 pF @ 50 V
-
210W (Tc)
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.