Single FETs, MOSFETs

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFU9024NPBF MOSFET P-CH 55V 11A IPAK Infineon Technologies	6,049 In Stock	1 : ¥7.14000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	11A (Tc)	10V	175mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	38W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
CPH3350-TL-H SMALL SIGNAL FIELD-EFFECT TRANSI onsemi	124,973 Marketplace	Unavailable Unavailable in your selected currency	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	-	83mOhm @ 1.5A, 4.5V	-	4.6 nC @ 4.5 V	-	375 pF @ 10 V	-	-	-	Surface Mount	3-CPH	TO-236-3, SC-59, SOT-23-3

Showing

of 2

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.