Single FETs, MOSFETs

Results: 2
Series
TrenchFET®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)21A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs
5.38mOhm @ 10A, 10V120mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA3V @ 250µA
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 30 V917 pF @ 15 V
Power Dissipation (Max)
2.4W (Ta), 5W (Tc)3.7W (Ta), 36W (Tc)
Supplier Device Package
8-SOICPowerPAK® SO-8
Package / Case
8-SOIC (0.154", 3.90mm Width)PowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI9407BDY-T1-GE3
MOSFET P-CH 60V 4.7A 8SO
Vishay Siliconix
16,679
In Stock
1 : ¥8.87000
Cut Tape (CT)
2,500 : ¥3.66039
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
4.7A (Tc)
4.5V, 10V
120mOhm @ 3.2A, 10V
3V @ 250µA
22 nC @ 10 V
±20V
600 pF @ 30 V
-
2.4W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
PowerPAK SO-8
SIRA14BDP-T1-GE3
MOSFET N-CH 30V 21A/64A PPAK SO8
Vishay Siliconix
5,971
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.36737
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
21A (Ta), 64A (Tc)
4.5V, 10V
5.38mOhm @ 10A, 10V
2.2V @ 250µA
22 nC @ 10 V
+20V, -16V
917 pF @ 15 V
-
3.7W (Ta), 36W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.