Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V55 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)3.8A (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4V4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.9mOhm @ 25A, 10V40mOhm @ 3.8A, 10V3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.1V @ 100µA2V @ 250µA2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V400 nC @ 10 V
Vgs (Max)
±10V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.3 pF @ 3 V870 pF @ 25 V14300 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)1W (Ta)6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
PowerPAK® SO-8SOT-223VESM
Package / Case
PowerPAK® SO-8SOT-723TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT223-3L
IRLL2705TRPBF
MOSFET N-CH 55V 3.8A SOT223
Infineon Technologies
27,932
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.94394
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
3.8A (Ta)
4V, 10V
40mOhm @ 3.8A, 10V
2V @ 250µA
48 nC @ 10 V
±16V
870 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
PowerPAK SO-8
SI7141DP-T1-GE3
MOSFET P-CH 20V 60A PPAK SO-8
Vishay Siliconix
22,992
In Stock
1 : ¥18.31000
Cut Tape (CT)
3,000 : ¥8.27116
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
60A (Tc)
4.5V, 10V
1.9mOhm @ 25A, 10V
2.3V @ 250µA
400 nC @ 10 V
±20V
14300 pF @ 10 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PB-F VESM S-MOS (LF) TRANSISTOR
SSM3K16FV,L3F
PB-F VESM S-MOS (LF) TRANSISTOR
Toshiba Semiconductor and Storage
6,969
In Stock
1 : ¥1.56000
Cut Tape (CT)
8,000 : ¥0.26403
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
±10V
9.3 pF @ 3 V
-
150mW (Ta)
150°C
Surface Mount
VESM
SOT-723
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.