Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon TechnologiesVishay Siliconix
Series
-CoolMOS™ CE
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)2.5A (Ta)2.6A (Tc)5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
130mOhm @ 2.8A, 4.5V1.5Ohm @ 1.1A, 10V3.4Ohm @ 500mA, 10V4.4Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA3.5V @ 40µA3.5V @ 90µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V6.5 nC @ 4.5 V9.4 nC @ 10 V18 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V200 pF @ 100 V350 pF @ 25 V608 pF @ 6 V
Power Dissipation (Max)
800mW (Ta)2.5W (Ta), 42W (Tc)29W (Tc)49W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DPAKPG-TO252-3SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD60R1K5CEAUMA1
MOSFET N-CH 600V 5A TO252
Infineon Technologies
8,975
In Stock
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.95318
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
5A (Tc)
10V
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
-
49W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFRC20TRPBF
MOSFET N-CH 600V 2A DPAK
Vishay Siliconix
10,528
In Stock
1 : ¥10.18000
Cut Tape (CT)
2,000 : ¥4.20256
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2A (Tc)
10V
4.4Ohm @ 1.2A, 10V
4V @ 250µA
18 nC @ 10 V
±20V
350 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-23-3
DMG2301U-7
MOSFET P-CH 20V 2.5A SOT23-3
Diodes Incorporated
113,920
In Stock
273,000
Factory
1 : ¥2.46000
Cut Tape (CT)
3,000 : ¥0.54779
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
2.5V, 4.5V
130mOhm @ 2.8A, 4.5V
1V @ 250µA
6.5 nC @ 4.5 V
±8V
608 pF @ 6 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO252-3
IPD60R3K4CEAUMA1
MOSFET N-CH 600V 2.6A TO252-3
Infineon Technologies
4,180
In Stock
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49336
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2.6A (Tc)
10V
3.4Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
-
29W (Tc)
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.