Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V40 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)590mA (Ta)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 50A, 10V495mOhm @ 400mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
700mV @ 250µA (Typ)1.5V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.54 nC @ 8 V145 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V80 pF @ 10 V6045 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)240mW (Ta)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-323SOT-523TO-263 (D2PAK)
Package / Case
SC-70, SOT-323SOT-523TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
735,331
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40361
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-323
SC-70, SOT-323
SOT-523
DMP21D0UT-7
MOSFET P-CH 20V 590MA SOT523
Diodes Incorporated
311,220
In Stock
891,000
Factory
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.66245
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
590mA (Ta)
1.8V, 4.5V
495mOhm @ 400mA, 4.5V
700mV @ 250µA (Typ)
1.54 nC @ 8 V
±8V
80 pF @ 10 V
-
240mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-523
SOT-523
TO-263 (D2Pak)
SQM50P04-09L_GE3
MOSFET P-CHANNEL 40V 50A TO263
Vishay Siliconix
1,466
In Stock
1 : ¥20.61000
Cut Tape (CT)
800 : ¥11.52225
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
9.4mOhm @ 50A, 10V
2.5V @ 250µA
145 nC @ 10 V
±20V
6045 pF @ 10 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.