Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesLittelfuse Inc.onsemiVishay Siliconix
Series
-OptiMOS™TrenchP™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Tc)310mA (Ta)210A (Tc)280A (Tc)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
0.75mOhm @ 150A, 10V1.4mOhm @ 10A, 10V7.5mOhm @ 105A, 10V3Ohm @ 115mA, 10V7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 250µA3.3V @ 280µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 10 V287 nC @ 10 V731 nC @ 10 V740 nC @ 10 V
Vgs (Max)
±15V±20V
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 25 V50 pF @ 25 V16000 pF @ 30 V33050 pF @ 15 V69500 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)370mW (Ta)375W (Tc)600W (Tc)830W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Chassis MountSurface Mount
Supplier Device Package
PG-HSOF-8-1PowerPAK® 8 x 8SOT-227BSOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerSFNPowerPAK® 8 x 8SOT-227-4, miniBLOCTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IPT059N15N3ATMA1
IPT007N06NATMA1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
14,842
In Stock
1 : ¥52.21000
Cut Tape (CT)
2,000 : ¥25.40434
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
SOT-23-3
DMN65D8L-7
MOSFET N-CH 60V 310MA SOT23
Diodes Incorporated
370,823
In Stock
126,000
Factory
1 : ¥1.40000
Cut Tape (CT)
3,000 : ¥0.23992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
0.87 nC @ 10 V
±20V
22 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT 23-3
2N7002LT3G
MOSFET N-CH 60V 115MA SOT23-3
onsemi
23,662
In Stock
1 : ¥2.22000
Cut Tape (CT)
10,000 : ¥0.28474
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK_8X8L_Top
SQJQ131EL-T1_GE3
AUTOMOTIVE P-CHANNEL 30 V (D-S)
Vishay Siliconix
2,085
In Stock
1 : ¥26.27000
Cut Tape (CT)
2,000 : ¥12.79630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
280A (Tc)
4.5V, 10V
1.4mOhm @ 10A, 10V
2.5V @ 250µA
731 nC @ 10 V
±20V
33050 pF @ 15 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
IXYK1x0xNxxxx
IXTN210P10T
MOSFET P-CH 100V 210A SOT227B
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥412.62000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
210A (Tc)
10V
7.5mOhm @ 105A, 10V
4.5V @ 250µA
740 nC @ 10 V
±15V
69500 pF @ 25 V
-
830W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
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of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.