Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedonsemiRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)8.5A (Ta)12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 10V21mOhm @ 10A, 10V24mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.1V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13.2 nC @ 10 V17.8 nC @ 4.5 V62 nC @ 10 V
Vgs (Max)
±8V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
697 pF @ 15 V1540 pF @ 16 V3200 pF @ 15 V
Power Dissipation (Max)
470mW (Ta)1W (Ta)2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSMT (3.2x3)POWERDI3333-8SOT-23-3 (TO-236)
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RQ3E120ATTB
RQ3E120ATTB
MOSFET P-CH 30V 12A 8HSMT
Rohm Semiconductor
10,923
In Stock
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥2.30411
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12A (Ta)
4.5V, 10V
8mOhm @ 12A, 10V
2.5V @ 1mA
62 nC @ 10 V
±20V
3200 pF @ 15 V
-
2W (Ta)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
SOT 23-3
NTR3C21NZT1G
MOSFET N-CH 20V 3.6A SOT23-3
onsemi
10,592
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥1.15457
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.8V, 4.5V
24mOhm @ 5A, 4.5V
1V @ 250µA
17.8 nC @ 4.5 V
±8V
1540 pF @ 16 V
-
470mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerDI3333-8
DMN3018SFG-13
MOSFET N-CH 30V 8.5A PWRDI3333-8
Diodes Incorporated
14,305
In Stock
12,000
Factory
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.09420
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
8.5A (Ta)
4.5V, 10V
21mOhm @ 10A, 10V
2.1V @ 250µA
13.2 nC @ 10 V
±25V
697 pF @ 15 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.