Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002 MOSFET SOT23 N 60V 5OHM 150C onsemi	80,965 In Stock 30,000 Factory	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.98624 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS84 MOSFET P-CH 50V 130MA SOT23-3 onsemi	108,845 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.06410 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	4.5V, 10V	8Ohm @ 150mA, 10V	2.5V @ 250µA	1.3 nC @ 5 V	±20V	73 pF @ 25 V	-	225mW (Ta)	150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IPC302N20NFDX1SA1 MOSFET N-CH 200V 1A SAWN ON FOIL Infineon Technologies	0 In Stock Check Lead Time	4,425 : ¥35.52502 Bulk	OptiMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	1A (Tj)	10V	100mOhm @ 2A, 10V	4V @ 270µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.