Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta)50A (Tc)
Rds On (Max) @ Id, Vgs
15mOhm @ 17A, 10V20mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V165 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1845 pF @ 15 V4950 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta)2.5W (Ta), 113W (Tc)
Supplier Device Package
8-SOICTO-252AA
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
FDS4435BZ
MOSFET P-CH 30V 8.8A 8SOIC
onsemi
16,984
In Stock
1 : ¥5.58000
Cut Tape (CT)
2,500 : ¥2.13159
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8.8A (Ta)
4.5V, 10V
20mOhm @ 8.8A, 10V
3V @ 250µA
40 nC @ 10 V
±25V
1845 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
TO-252
SUD50P06-15-GE3
MOSFET P-CH 60V 50A TO252
Vishay Siliconix
5,570
In Stock
1 : ¥21.02000
Cut Tape (CT)
2,000 : ¥9.48430
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
15mOhm @ 17A, 10V
3V @ 250µA
165 nC @ 10 V
±20V
4950 pF @ 25 V
-
2.5W (Ta), 113W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.