Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V50 V
Current - Continuous Drain (Id) @ 25°C
130mA (Ta)6.5A (Ta), 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
23mOhm @ 6.5A, 10V10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.59 nC @ 10 V8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
45 pF @ 25 V465 pF @ 15 V
Power Dissipation (Max)
300mW (Ta)1.5W (Ta)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDN537N
MOSFET N-CH 30V 6.5A SUPERSOT3
onsemi
7,613
In Stock
69,000
Factory
1 : ¥5.34000
Cut Tape (CT)
3,000 : ¥2.03942
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.5A (Ta), 6.5A (Tc)
4.5V, 10V
23mOhm @ 6.5A, 10V
3V @ 250µA
8.4 nC @ 10 V
±20V
465 pF @ 15 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS84Q-7-F
BSS FAMILY SOT23 T&R 3K
Diodes Incorporated
4,403
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58880
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
130mA (Ta)
5V
10Ohm @ 100mA, 5V
2V @ 1mA
0.59 nC @ 10 V
±20V
45 pF @ 25 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.