Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesToshiba Semiconductor and Storage
Series
OptiMOS™U-MOSIX-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V250 V
Current - Continuous Drain (Id) @ 25°C
10.9A (Tc)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 10V165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 300µA4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs
11.4 nC @ 10 V24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 100 V1855 pF @ 50 V
Power Dissipation (Max)
630mW (Ta), 104W (Tc)62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)PG-TSDSON-8
Package / Case
8-PowerTDFN8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSZ16DN25NS3GATMA1
MOSFET N-CH 250V 10.9A 8TSDSON
Infineon Technologies
5,064
In Stock
1 : ¥15.52000
Cut Tape (CT)
5,000 : ¥6.73647
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
10.9A (Tc)
10V
165mOhm @ 5.5A, 10V
4V @ 32µA
11.4 nC @ 10 V
±20V
920 pF @ 100 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
8-PowerVDFN PKG
TPN1200APL,L1Q
PB-F POWER MOSFET TRANSISTOR TSO
Toshiba Semiconductor and Storage
4,386
In Stock
1 : ¥6.49000
Cut Tape (CT)
5,000 : ¥2.34610
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
11.5mOhm @ 20A, 10V
2.5V @ 300µA
24 nC @ 10 V
±20V
1855 pF @ 50 V
-
630mW (Ta), 104W (Tc)
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.