Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMN3023L-7 MOSFET N-CH 30V 6.2A SOT23 Diodes Incorporated	200,658 In Stock 5,859,000 Factory	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.80711 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	25mOhm @ 4A, 10V	1.8V @ 250µA	18.4 nC @ 10 V	±20V	873 pF @ 15 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMT10H010LK3-13 MOSFET N-CH 100V 68.8A TO252 Diodes Incorporated	23,140 In Stock 90,000 Factory	1 : ¥9.77000 Cut Tape (CT) 2,500 : ¥4.03597 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	68.8A (Tc)	6V, 10V	8.8mOhm @ 13A, 10V	3V @ 250µA	53.7 nC @ 10 V	±20V	2592 pF @ 50 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138-TP MOSFET N-CH 50V 220MA SOT23 Micro Commercial Co	37,524 In Stock	1 : ¥1.64000 Cut Tape (CT) 3,000 : ¥0.28847 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Tj)	4.5V, 10V	3.5Ohm @ 220mA, 10V	1.5V @ 1mA	-	±20V	60 pF @ 25 V	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.