Single FETs, MOSFETs

Results: 2
Series
MDmesh™ II PlusMDmesh™ V
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)26A (Tc)
Rds On (Max) @ Id, Vgs
125mOhm @ 13A, 10V148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
816 pF @ 100 V1781 pF @ 100 V
Power Dissipation (Max)
30W (Tc)35W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220FP
STF33N60M2
MOSFET N-CH 600V 26A TO220FP
STMicroelectronics
951
In Stock
1 : ¥25.94000
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N-Channel
MOSFET (Metal Oxide)
600 V
26A (Tc)
10V
125mOhm @ 13A, 10V
4V @ 250µA
45.5 nC @ 10 V
±25V
1781 pF @ 100 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-220-F
STF31N65M5
MOSFET N-CH 650V 22A TO220FP
STMicroelectronics
1,115
In Stock
1 : ¥34.32000
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N-Channel
MOSFET (Metal Oxide)
650 V
22A (Tc)
10V
148mOhm @ 11A, 10V
5V @ 250µA
45 nC @ 10 V
±25V
816 pF @ 100 V
-
30W (Tc)
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.